Structural, Optical and Simulation Studies of Hybrid Perovskite CH3NH3PbI3 using Al doped ZnO as an ETL and CuSbS2 as a HTL for Solar Applications

Document Type : Research Article

Authors

1 LVO BEEN Laboratory, GMEEM & DD Group, Hassan II University of Casablanca FSTM BP 146 Mohammedia, MOROCCO

2 LPMAT Laboratory, Materials applied to photovoltaic and sensors Group, Hassan II University, Faculty of Science AIN CHOCK El Jadida Road km9-Bp 5366 Maarif, Casablanca, MOROCCO

3 IMERN Laboratory, SME2D Team, FST Errachidia, University Moulay Ismail of Meknes, BP 509 Boutalamine, 52000 Errachidia, MOROCCO

4 LMOPS Laboratory, University of Lorraine, 57000, Metz, FRANCE

Abstract

Researchers have always had a challenge figuring out the discrepancy between solar cell simulation and experimental results. The purpose of this research is to elaborate and examine organic-inorganic perovskite lead methylammonium iodide CH_3 NH_3 PbI_3 as an absorber layer for a solar cell application, and also explore novel structures employing Al doped ZnO as an ETL, CuSbS2 as HTL through SCAPS 1D simulator program. The CH_3 NH_3 PbI_3 was prepared employing the sol-gel dip-coating method, a low-cost production process. In order to establish the films' structural integrity, the absorber layer films were analyzed using X-ray diffraction. Ultraviolet-visible (UV-Vis) spectroscopy was utilized to compute the optical parameters, which include the absorption, transmission, and band gap energy, which will be utilized during the simulation part. An optimization investigation involving the influence of CuSbS2, perovskite, AZO thicknesses, defect density of the absorber layer, and different operating temperatures on the electrical output parameters (Voc, Jsc, FF, and ƞ) revealed an improvement in the efficiency of solar cells to 25.31% under 0.9 µm, 0.7 µm, and 0.04 µm thicknesses for the hole-transporting material, absorber, and electron-transporting layer, respectively. The AZO/perovskite and the perovskite/HTL interfaces were also examined. The series and shunt resistance was simulated at different values to investigate their effect on the device’s works.

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