An Investigation of SILAR grown CdO thin films

Document Type: Research Article

Authors

1 Department of Physics, Alagappa Government Arts College, Karaikudi – 630 003, India

2 Department of Physics, Caussanel College of Arts and Science, Ramanathapuram - 623 523, India

3 Department of Physics, Alagappa Government Arts College, Karaikudi – 630 003, India.

4 Department of Physics, Sri Sevugan Annamalai College, Devakottai – 630 303, India

Abstract

Cadmium oxide (CdO) thin films were deposited on glass substrate by modified SILAR method, using cadmium acetate dyhydrate and ammonium hydroxide aqueous solution as precursors. The structural, surface morphological, EDAX and optical properties of the deposited films were investigated via X-ray diffraction, scanning electron microscopy, optical absorption, photo luminescence and FTIR spectroscopy. The XRD analysis reveals that the films were polycrystalline with cubic structure. Both crystallinity and grain size were found to increase with increasing solution concentration. Energy dispersive spectroscopic analysis confirmed the presence of Cd and O elements. The films exhibited maximum transmittance (50% - 70%) in the infra-red region. Transmittance was found to increase with increasing precursor concentration and estimated band gap energy (Eg) was in the range of 2.17 – 2.21 eV.

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