Structural Properties of Post Annealed ITO Thin Films at Different Temperatures

Document Type: Research Article

Authors

1 Thin Film Laboratory, ECE Department, University of Tehran, Tehran, I.R. IRAN

2 Nuclear Science and Technology Research Institute, Laser and Optics Research School, Tehran, I.R. IRAN

Abstract

Indium tin oxide (ITO) thin films were deposited on glass substrates by RF sputtering using an ITO ceramic target (In2O3-SnO2, 90-10 wt. %). After deposition, samples were annealed at different temperatures in vacuum furnace. The post vacuum annealing effects on the structural, optical and electrical properties of ITO films were investigated. Polycrystalline ITO films have been analyzed in wide optical spectrum, X-ray diffraction and four point probe methods. The results show that increasing the annealing temperature improves the crystallinity of the films. The resistivity of the deposited films is about 19×10-4 Ωcm and falls down to 7.3×10-5 Ωcm as the annealing temperature is increased to 500 °C in vacuum.

Keywords

Main Subjects


[1] Galasso, F.S., “Oxford, New York, Toronto, Sydney, Branschweing, Pergamon Press”, 90 (1970).

[2] Elfallal, I., Rilkington, R. D., Hill, A. E., Journal ofThin Solid Films, 223, 303 (1993).

[3] Ederth, J., Doctoral Degree Dissertation, UppsalaUniversity, 4 (2003).

[4] Nadaud, N., Lequeux, N., Nanot, M., Jove, J., Roisnel, T., Journal of Solid State Chem., 135, 140 (1998).

[5] Yamada, N., Yasui, I., Shigesato, Y., Li, Y., Ujihira, Y., Nomura, K., Jpn. J. Appl. Phys., 38(5A), 2856 (1999).

[6] Devi, P. S., Chatterjee, M., Ganguli, D., Materials Letters, 55, 205 (2002).      

[7] Nguyen, T.P., Le Rendu, P., Dinh, N.N., Fourmigue, M., Meziere, C., Young, G. O., Synthetic Metals, 138, 229 (2003).     

[8] Luff, B.J., Wilkinson, J.S., Perrone, G., Appl. Optics, 36, 7066 (1997).

[9] Herrero, J., Guillen, C., Vacuum, 67, 611 (2002).

[10] Teixeira, V., Cui, H. N., Meng, L. J., Fortunato, E., Martins, R., Journal ofThin Solid Films, 420-421, 70  (2002).

[11] Kojima, M., Takahashi, F., Kinoshita, K., Nishibe, T., Ichidate, M., Journal ofThin Solid Films, 392, 349 (2001).  

[12] Fan, J. C. C., Bachner, F. J., Foley, G. H., Journal ofApplied Physics Letters, 31(11), 773 (1977). 

[13] Sreenivas, K., Sundarsena Rao, T., Mansnigh, A., Chandra, S., Journal of Applied Physics, 57(2), 384 (1985).

[14] Kim, H., Horwitz, J. S., Kim, W. H., Kafafi, Z., Chrisey, D. B., Journal of Materials Research Society Symposium- Proceedings, 780, 21 (2003). 

[15] Buchanan, M., Webb, J. B., Williams, D. F., Journal of Thin Solid Films,80, 373 (1981).

[16] Higuchi, M., Uekusa, S., Nakano, R., Yokogawa, K., Japanese Journal of Applied Physics, 33, 302 (1994).

[17] Balasubramanian, N., Subrahmanyam, A., Journal of Material Science and Engineering, B1, 279 (1988).

[18] Bergman, J., Shapira, Y., Aharoni, H., Journal of Applied Physics, 67(8), 3750 (1990).

[19] Haitjema, H., Elich, J. J. Ph., Journal of Thin Solid Films, 205, 93 (1991).

[20] Alam, M. J., Cameron, D. C., Journal of Thin Solid Films, 420-421, 76 (2002).

[21] Jung, Y. S., Journal of Solid State Commune, 129, 491 (2004).

[22] Guillen, C., Herrero, J., Journal of Thin Solid Films, 510, 260 (2006).

[23] Hu, Y., Diao, X., Wang, C., Hao, W., Wang, T., Journal of Vacuum, 75, 183 (2004).

[24] Daoudi,  K., Canut, B., Blanchin, M.G., Sandu, C.S., Teodorescu, V.S., Roger, J.A., Materials Science and Engineering C 21, 313 (2002).

[25] Mirzae,  F.,  Maleki,  M.  H.,  Mirjalili,  G.,  14th Conference on Optics and Photonics Proceedings,(2008).  

[26] Shigesato, Y., Paine, D.  C., Journal of Thin Solid Films, 238, 44 (1994).

[27] Kerkach, L., Layadi, A., Dogheche, E., Remiens, D., J. Phys. D: Appl. Phys., 39, 184 (2006).