TY - JOUR ID - 7631 TI - Ohmic Contact of Cu/Mo and Cu/Ti Thin Layers on Multi-Crystalline Silicon Substrates JO - Iranian Journal of Chemistry and Chemical Engineering JA - IJCCE LA - en SN - 1021-9986 AU - Dehghan Nayeri, Fatemeh AU - Esfandiyarpour, Behzad AU - Behnam, Ashkan AU - Asl Soleimani, Ebrahim AU - Mohajerzadeh, Shamsodin AU - Maleki, Mohammad Hadi AD - Thin Film Laboratory, ECE Department, University of Tehran, Tehran, I.R. IRAN AD - Laser Research Center, Tehran, I.R. IRAN Y1 - 2007 PY - 2007 VL - 26 IS - 3 SP - 55 EP - 59 KW - Cu-Mo contact KW - Cu-Ti contact KW - Ohmic contact KW - Resistivity DO - 10.30492/ijcce.2007.7631 N2 - Cu-Mo and Cu-Ti contact structures were fabricated on multi-crystalline silicon substrates to provide a low resistance ohmic contact. Deposition steps are done in an excellent vacuum chamber by means of electron beam evaporation and samples are then annealed for the realization of an efficient alloy layer. The effects of process parameters such as film thickness, annealing duration and temperature on the contact quality have been investigated and optimized for achieving the best special contact resistivity. The specific contact resistance obtained for Cu-Mo and Cu-Ti structures were 8.58×10-6 Ω-cm2 and 9.72×10-6 Ω-cm2, respectively. Finally, between the two proposed structures a comparison has been made which is resulted in the selection of Cu-Mo contact as the better structure due to its less resistance and better adhesion to the substrate. UR - https://ijcce.ac.ir/article_7631.html L1 - https://ijcce.ac.ir/article_7631_c65e4ba79f285da9e8e00238f2563ccb.pdf ER -